Title :
ZnO thin films formed from ZnN target by RF sputtering: From materials to devices
Author :
Kampylafka, V. ; Kostopoulos, A. ; Androulidaki, M. ; Tsagaraki, K. ; Modreanu, M. ; Aperathitis, E.
Author_Institution :
Microelectron. Res. Group, Inst. of Electron. Struct. & Laser, Heraklion, Greece
Abstract :
In this work a single ZnN sputtering target was used to fabricate n-and p-type transparent films, namely: (a) n-ZnN thin films in pure Ar plasma and (b) p-ZnO:N films in Ar-O2 plasma. The structural, optical and electrical properties of the films were investigated. Zinc nitride films deposited in pure Ar were n-type, with low resistivity. Films deposited in more than 40% O2 in plasma were p-type ZnO films. A thin film transistor having zinc nitride as channel layer as well as n-ZnN/p-ZnO and p/n ZnO diodes in a single deposition run were fabricated and characterized.
Keywords :
II-VI semiconductors; electrical resistivity; infrared spectra; nitrogen; semiconductor thin films; sputter deposition; ultraviolet spectra; wide band gap semiconductors; zinc compounds; RF sputtering; UV-NIR spectrum; ZnN; ZnO:N; electrical properties; electrical resistivity; optical properties; p-type transparent films; structural properties; thin film transistor; thin films; Annealing; Argon; Conductivity; Films; Plasmas; Zinc oxide;
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-61284-173-1
DOI :
10.1109/SMICND.2011.6095792
