Electric and optical properties of In2−x−ySnxZnyO3−δ thin films

Author

Iacomi, F. ; Lazar, A. ; Frunza, R. ; Rotaru, R. ; Cârlescu, A. ; Sandu, I. ; Purica, M. ; Gavrila, R.

Author_Institution

Fac. of Phys., Al. I. Cuza Univ. of Iasi, Iasi, Romania

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

283

Lastpage

286

Abstract

Some p-type and n-type ZITO transparent and conductive films of 300 nm thickness, have been deposited by vacuum thermal evaporation and oxidation in air on different substrates. The electrical and optical properties of the thin films have been studied as a function of chemical composition, substrate nature and annealing conditions. X-ray diffraction and scanning electron microscopy were used in order to investigate thin film structures. The electrical conductivity and transmittance of n-type thin films are higher than electrical conductivity and transmittance of p-type thin films.

Keywords

X-ray diffraction; annealing; electrical conductivity; indium compounds; light transmission; oxidation; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; tin compounds; transparency; vacuum deposition; In_2-x-ySn_xZn_yO_3-δ; X-ray diffraction; annealing; chemical composition; conductive films; electrical conductivity; electrical properties; n-type thin films; optical properties; oxidation; p-type thin films; scanning electron microscopy; size 300 nm; transmittance; transparent films; vacuum thermal evaporation; Annealing; Chemicals; Conductivity; Optical films; Photonic band gap; Substrates; Zinc; electrical properties; n-type TCO; optical properties; p-type TCO; structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095793

Filename

6095793