Ga doped ZnO thin films deposited by RF magnetron sputtering — Preparation and properties

Author

Irimia, M. ; Rambu, A.P. ; Zodieru, G. ; Leonte, I.I. ; Purica, M. ; Iacomi, F.

Author_Institution

Fac. of Phys., Al. I. Cuza Univ. of Iasi, Iasi, Romania

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

287

Lastpage

290

Abstract

Gallium doped zinc oxide, GZO, thin films have been deposited onto glass substrate by RF magnetron sputtering at various substrate temperatures. The electrical and optical properties of the thin films have been studied as a function of substrate temperature. X-ray diffraction was used in order to investigate thin film structures. The thin film structure was stabilised by heating the samples in air at 423K. The best electrical conductivity and transmittance of GZO thin films was obtained when the substrate temperature was 473K.

Keywords

II-VI semiconductors; X-ray diffraction; electrical conductivity; gallium; heat treatment; semiconductor doping; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; RF magnetron sputtering; SiO₂; UV-VIS spectra; X-ray diffraction; ZnO:Ga; electrical conductivity; electrical properties; gallium doped zinc oxide thin films; glass substrate; heat treatment; optical properties; structural properties; temperature 423 K; Absorption; Conductivity; Gallium; Photonic band gap; Substrates; Temperature; Zinc oxide; electrical properties; n-type TCO; optical properties; structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095794

Filename

6095794