Cosmic ray immunity of new IGBT structures for aerospace application

Author

Zerarka, M. ; Austin, P. ; Bafleur, M.

Author_Institution

LAAS, Toulouse, France

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

305

Lastpage

308

Abstract

Single-Event-Burnout (SEB) is a catastrophic failure mode in power semiconductor devices triggered by cosmic ray heavy ions. Thus, it is essential to improve the robustness of these devices under this environment. In this paper a new design of planar insulated gate bipolar transistor (IGBT) aimed at improving the immunity to SEB is proposed and validated by employing 3D Sentaurus - simulation. We show a significant decrease of failure compared the conventional IGBT. Moreover, it was analytically derived that reducing the hole current moving under the emitter was effective in increasing the SEB threshold voltage.

Keywords

aerospace; insulated gate bipolar transistors; power semiconductor devices; 3D Sentaurus simulation; IGBT structure; SEB threshold voltage; aerospace application; catastrophic failure mode; cosmic ray immunity; insulated gate bipolar transistor; power semiconductor device; single-event-burnout; Current density; Insulated gate bipolar transistors; Junctions; Logic gates; Semiconductor process modeling; Threshold voltage; Thyristors; Cosmic ray; IGBT; SEB; TCAD simulations; parasitic thyristor;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095800

Filename

6095800