PbGa2Se4 semiconductor for gamma-ray detection

Author

Kargar, A. ; Tower, Joshua P. ; Huicong Hong ; Cirignano, L.J. ; Hadong Kim ; Beck, P.R. ; Conway, A.M. ; Drury, O.B. ; Voss, L.F. ; Graff, R.T. ; Nelson, A.J. ; Nikolic, R.J. ; Payne, Stephen A. ; Badikov, Valeriy ; Shah, Karan

Author_Institution

RMD Inc., Watertown, MA, USA

fYear

2012

fDate

Oct. 27 2012-Nov. 3 2012

Firstpage

4258

Lastpage

4261

Abstract

In this paper the fabrication and characterization of lead gallium selenide (PbGa₂Se₄) semiconductor devices are reported. PbGa₂Se₄ semiconductor crystals were grown by vertical Bridgman method and planar devices were fabricated from cleaved crystals. The resistivity of the samples with chromium gold contacts was measured to be in the 10¹³ Ω cm range. Pulse height spectra were collected using ²⁴¹Am, ¹⁰⁹Cd, ⁵⁷CO, and ¹³⁷Cs gamma-ray sources. A full energy peak was also observed from the Ag x-rays of ¹⁰⁹Cd gamma ray source with 250 μm thick PbGa₂Se₄ planar device.

Keywords

crystal growth from melt; electrical resistivity; gallium compounds; gamma-ray detection; lead compounds; semiconductor counters; semiconductor materials; ¹⁰⁹Cd gamma-ray source; ¹³⁷Cs gamma-ray source; ²⁴¹Am gamma-ray source; ⁵⁷Co gamma-ray source; PbGa₂Se₄; chromium gold contact; cleaved crystal; gamma ray detection; lead gallium selenide; pulse height spectra; resistivity; semiconductor detector; size 250 mum; vertical Bridgman method;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

978-1-4673-2028-3

Type

conf

DOI

10.1109/NSSMIC.2012.6551971

Filename

6551971