Title :
PbGa2Se4 semiconductor for gamma-ray detection
Author :
Kargar, A. ; Tower, Joshua P. ; Huicong Hong ; Cirignano, L.J. ; Hadong Kim ; Beck, P.R. ; Conway, A.M. ; Drury, O.B. ; Voss, L.F. ; Graff, R.T. ; Nelson, A.J. ; Nikolic, R.J. ; Payne, Stephen A. ; Badikov, Valeriy ; Shah, Karan
Author_Institution :
RMD Inc., Watertown, MA, USA
fDate :
Oct. 27 2012-Nov. 3 2012
Abstract :
In this paper the fabrication and characterization of lead gallium selenide (PbGa2Se4) semiconductor devices are reported. PbGa2Se4 semiconductor crystals were grown by vertical Bridgman method and planar devices were fabricated from cleaved crystals. The resistivity of the samples with chromium gold contacts was measured to be in the 1013 Ω cm range. Pulse height spectra were collected using 241Am, 109Cd, 57CO, and 137Cs gamma-ray sources. A full energy peak was also observed from the Ag x-rays of 109Cd gamma ray source with 250 μm thick PbGa2Se4 planar device.
Keywords :
crystal growth from melt; electrical resistivity; gallium compounds; gamma-ray detection; lead compounds; semiconductor counters; semiconductor materials; 109Cd gamma-ray source; 137Cs gamma-ray source; 241Am gamma-ray source; 57Co gamma-ray source; PbGa2Se4; chromium gold contact; cleaved crystal; gamma ray detection; lead gallium selenide; pulse height spectra; resistivity; semiconductor detector; size 250 mum; vertical Bridgman method;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-2028-3
DOI :
10.1109/NSSMIC.2012.6551971
