Title :
High mobility III–V channel MOSFETs for post-Si CMOS applications
Author :
Sun, Yanning ; Kiewra, E.W. ; de Souza, J.P. ; Koester, S.J. ; Bucchignano, J.J. ; Ruiz, N. ; Fogel, K.E. ; Sadana, D.K. ; Shahidi, G.G. ; Fompeyrine, J. ; Webb, D.J. ; Sousa, M. ; Marchiori, C. ; Germann, R. ; Shiu, K.T.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 muA/mum and transconductance of 793 muS/mum have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; gallium arsenide; indium compounds; GaAs; GaAs MOSFETs; III-V compound semiconductors; InGaAs; channel materials; current 960 muA; high mobility III-V channel MOSFETs; on-state current; post-Si CMOS application; short-channel InGaAs MOSFETs; transconductance; virtual source velocity; CMOS technology; Capacitive sensors; Electron mobility; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium gallium arsenide; MOSFETs; Power engineering and energy; Transconductance; CMOS; III–V; InGaAs short-channel MOSFET; scaling;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166286
