Properties of alloyed AuGeNi-contacts on GaAs/GaAlAs-heterostructures

Author

Jucknischke, D. ; Buhlmann, H.J. ; Ilegems, M. ; Jeckelmann, B. ; Schwitz, W.

Author_Institution

Inst. for Micro- & Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland

fYear

1990

fDate

11-14 June 1990

Firstpage

336

Lastpage

337

Abstract

The technique of contacting GaAs/AlGaAs heterostructures using an evaporated AuGeNi alloy has been refined with emphasis on optimum contact properties in the quantum Hall regime. The resistance of the electrical contacts to two-dimensional electron gas has been measured in various heterostructures with two different methods. The results of the first method using a transmission line and the second one using the quantum Hall effect as well as the good time and thermal cycling stabilities obtained demonstrate the high quality of the contacts. The contact resistance in the quantum Hall regime is found to be lower than 1 Omega .<>

Keywords

III-V semiconductors; aluminium compounds; contact resistance; electric resistance measurement; electrical contacts; electron gas; gallium arsenide; germanium alloys; gold alloys; nickel alloys; p-n heterojunctions; quantum Hall effect; semiconductor-metal boundaries; 1 ohm; GaAs-GaAlAs; contact resistance; electrical contacts; evaporated AuGeNi alloy; heterostructures; optimum contact; quantum Hall effect; semiconductor; thermal cycling stabilities; transmission line; two-dimensional electron gas; Contact resistance; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; Magnetic field measurement; Nickel alloys; Ohmic contacts; Transmission line measurements; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on

Conference_Location

Ottawa, Ontario, Canada

Type

conf

DOI

10.1109/CPEM.1990.110049

Filename

110049