Title :
Thermal characterization of stacked aluminum nitride multichip modules
Author :
Tao, Y.-X. ; Manickamdalli, R. ; Jensen, R. ; Devgan, P.
Author_Institution :
Dept. of Mech. Eng., Tennessee State Univ., Nashville, TN, USA
fDate :
29 May-1 Jun 1996
Abstract :
Recent development in three-dimensional packaging technology prompts necessary thermal characterization of developed modules. This paper presents the numerical results of temperature and heat flux profiles of a selected stacked module. The model simulates a stacked, multilayer multichip module (MCMs) using aluminum nitride (AlN) substrates with Technology Characterization Vehicles (TCVs) configuration. The simulation conditions for thermal analysis are specified as the single- or two- layered module, with discrete heat sources, mounted on a constant temperature heat sink. A commercial finite element code (COSMOS/M) is used to obtain thermal analysis results by incorporating the convective boundary conditions. The results include temperature and heat flux distribution in the module where chips have different bonding conditions (wire bonded and flip chip). The simulation results are compared with preliminary experimental test data
Keywords :
aluminium compounds; convection; finite element analysis; heat sinks; integrated circuit packaging; multichip modules; thermal analysis; AlN; bonding conditions; constant temperature heat sink; convective boundary conditions; discrete heat sources; finite element code; heat flux profiles; single-layered module; stacked multichip modules; technology characterization vehicles; temperature profiles; thermal analysis; thermal characterization; three-dimensional packaging technology; two-layered module; Aluminum nitride; Analytical models; Bonding; Finite element methods; Heat sinks; Multichip modules; Nonhomogeneous media; Packaging; Temperature; Vehicles;
Conference_Titel :
Thermal Phenomena in Electronic Systems, 1996. I-THERM V., Inter-Society Conference on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3325-X
DOI :
10.1109/ITHERM.1996.534581