The small signal amplification of the gated diode operated in breakdown regime

Author

Rusu, Alexandru ; Dobrescu, Dragos ; Enachescu, Marius ; Burileanu, Corneliu ; Rusu, Adrian

Author_Institution

Fac. of Electron., Telecommun. & Inf. Technol., Univ. “Politeh.” of Bucharest, Bucharest, Romania

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

321

Lastpage

324

Abstract

In this paper we present a unity-gain follower amplifier based on a gated diode operated in breakdown regime in common cathode configuration. The amplifier has only one stage and it provides power amplification, high input impedance and a low output one. The maximum frequency that can be applied on the entrance of the amplifier so that the output remains undistorted is dependent on the bias current therefore it can be used also as a programmable low pass filter. The diode is fully characterized in order to set the bias in the linear region where the amplification is very close to one.

Keywords

electric impedance; low-pass filters; power amplifiers; programmable filters; semiconductor device breakdown; semiconductor diodes; bias current; breakdown regime; common cathode configuration; gated diode; input impedance; power amplification; programmable low pass filter; small signal amplification; unity-gain follower amplifier; Breakdown voltage; Cathodes; Current measurement; Electric breakdown; Logic gates; Semiconductor device measurement; Semiconductor diodes; Breakdown; Common Cathode; Dynamic; Gated Diode; Small Signal;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095804

Filename

6095804