DocumentCode :
2563506
Title :
The small signal amplification of the gated diode operated in breakdown regime
Author :
Rusu, Alexandru ; Dobrescu, Dragos ; Enachescu, Marius ; Burileanu, Corneliu ; Rusu, Adrian
Author_Institution :
Fac. of Electron., Telecommun. & Inf. Technol., Univ. “Politeh.” of Bucharest, Bucharest, Romania
Volume :
2
fYear :
2011
fDate :
17-19 Oct. 2011
Firstpage :
321
Lastpage :
324
Abstract :
In this paper we present a unity-gain follower amplifier based on a gated diode operated in breakdown regime in common cathode configuration. The amplifier has only one stage and it provides power amplification, high input impedance and a low output one. The maximum frequency that can be applied on the entrance of the amplifier so that the output remains undistorted is dependent on the bias current therefore it can be used also as a programmable low pass filter. The diode is fully characterized in order to set the bias in the linear region where the amplification is very close to one.
Keywords :
electric impedance; low-pass filters; power amplifiers; programmable filters; semiconductor device breakdown; semiconductor diodes; bias current; breakdown regime; common cathode configuration; gated diode; input impedance; power amplification; programmable low pass filter; small signal amplification; unity-gain follower amplifier; Breakdown voltage; Cathodes; Current measurement; Electric breakdown; Logic gates; Semiconductor device measurement; Semiconductor diodes; Breakdown; Common Cathode; Dynamic; Gated Diode; Small Signal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-61284-173-1
Type :
conf
DOI :
10.1109/SMICND.2011.6095804
Filename :
6095804
Link To Document :
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