Title :
Crystal anisotropy of elastoresistance effect of semiconductive piezoresistor and its application to transducers
Author :
Toriyama, Toshiyuki ; Sugiyama, Srcsumu
Author_Institution :
Fac. of Sci. & Eng., Ritsumeikan Univ., Kyoto, Japan
Abstract :
An explicit equation which describes the strain-resistance relation, so-called elastoresistance, has been derived by means of piezoresistance and elastic coefficients. Typical examples of elastoresistance coefficients for p-Si have been calculated and illustrated as a function of crystal orientations in the principal crystal planes. The strain sensitivity of semiconductive piezoresistor and its dependence on the crystal orientation has been obtained from the illustration. As examples, a single transducer for a biaxial strain measurement and shear strain transducer have been explained. The optimum crystal plane and orientation for this purpose have been discussed
Keywords :
elemental semiconductors; piezoelectric semiconductors; piezoelectric transducers; piezoresistance; piezoresistive devices; silicon; Si; biaxial strain measurement; crystal anisotropy; crystal orientations; elastic coefficients; elastoresistance effect; semiconductive piezoresistor; shear strain transducer; strain-resistance relation; Anisotropic magnetoresistance; Capacitive sensors; Conductivity; Crystallography; Equations; Page description languages; Piezoresistance; Strain measurement; Tensile stress; Transducers;
Conference_Titel :
Micromechatronics and Human Science, 1998. MHS '98. Proceedings of the 1998 International Symposium on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-5130-4
DOI :
10.1109/MHS.1998.745779