High accuracy measurements of quantized Hall resistance ratios R/sub K/(i)/R/sub K/ (2i) for i=1 and 2 in GaAs and silicon

Author

Hartland, A. ; Jones, K. ; Williams, J.M. ; Davies, M. ; Gallagher, B.L. ; Galloway, T. ; Henini, M. ; Hughes, O.H.

Author_Institution

NPL, Teddington, UK

fYear

1990

fDate

11-14 June 1990

Firstpage

344

Lastpage

345

Abstract

Indirect measurements of the quantized Hall resistance of three GaAs devices confirm that within a combined relative uncertainty (1 sigma ) of about 15 parts in 10/sup 9/, the ratio R/sub K/(i)/R/sub K/ (2i) for i=1 and 2 is exactly 2. A cryogenic current comparator bridge has been constructed to compare directly R/sub K/(2) in GaAs and R/sub K/(4) in Si with a relative uncertainty of 1 part in 10/sup 9/.<>

Keywords

III-V semiconductors; bridge instruments; electric resistance measurement; elemental semiconductors; gallium arsenide; measurement standards; p-n heterojunctions; quantum Hall effect; semiconductor quantum wells; silicon; GaAs; III-V semiconductors; Si; cryogenic current comparator bridge; p-n heterostructure; quantized Hall resistance ratios; quantum well structure; Bridges; Electrical resistance measurement; Gallium arsenide; Laboratories; Magnetic field measurement; Physics; Resistors; Silicon; Temperature; Uncertainty;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on

Conference_Location

Ottawa, Ontario, Canada

Type

conf

DOI

10.1109/CPEM.1990.110052

Filename

110052