• DocumentCode
    2563598
  • Title

    The design of a 5 GHz VCO with phase noise performance analysis using MOSFET-based current sources

  • Author

    Bhana, V.B. ; Lambrechts, J.W. ; Sinha, S.

  • Author_Institution
    Dept. of Electr., Electron. & Comput. Eng., Univ. of Pretoria, Pretoria, South Africa
  • Volume
    2
  • fYear
    2011
  • fDate
    17-19 Oct. 2011
  • Firstpage
    335
  • Lastpage
    338
  • Abstract
    This paper describes the design of a 5 GHz cross-coupled LC VCO implemented in the single-supply S35D4M5 0.35 μm BiCMOS process by Austriamicrosystems. The paper further discusses the phase noise performance of various MOSFET-based current source topologies when implemented within the VCO. MOSFET current source characteristics such as flicker noise, device numbers, feedback, and the output resistance were investigated in order to achieve the best phase noise performance. The VCO operates with a tuning range of 4% about the centre frequency of 5 GHz. A phase noise of -108.0 dBc/Hz at a 1 MHz offset from the carrier frequency is achieved. The design also demonstrates a 60% improvement in frequency drift within the commercial temperature range when temperature stability circuitry is introduced.
  • Keywords
    BiCMOS integrated circuits; MOSFET; circuit stability; circuit tuning; constant current sources; phase noise; voltage-controlled oscillators; Austriamicrosystems; MOSFET current source characteristics; MOSFET-based current source topology; MOSFET-based current sources; carrier frequency; centre frequency; cross-coupled LC VCO; frequency 5 GHz; frequency drift; phase noise performance analysis; single-supply BiCMOS process; size 0.35 mum; temperature range; temperature stability circuitry; tuning range; Inductors; Mirrors; Phase noise; Topology; Tuning; Voltage-controlled oscillators; BiCMOS process; HBT; LC oscillator; MOSFET; NMOS; PMOS; PVT stability; Q factor; VCO; phase noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2011 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-61284-173-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2011.6095809
  • Filename
    6095809