DocumentCode :
2563645
Title :
An on-chip process control monitor for process variability measurements in nanometer technologies
Author :
Klass, Fabian ; Jain, Ashish ; Hess, Greg
Author_Institution :
Apple Inc., Cupertino, CA, USA
fYear :
2009
fDate :
18-20 May 2009
Firstpage :
203
Lastpage :
206
Abstract :
Process variability has become a fundamental challenge in nanometer technologies. This trend is driven by Moore´s law, which governs the exponential growth of transistors in ICs, the low-power requirements of mobile devices (i.e., Vdd < 1 V), and the shrinking geometries of advanced technologies reaching the sub-nanometer dimensions. Understanding process variability is therefore key to successfully designing ultra low-power multi-million gate SoCs. An all-digital on-chip process control-monitor (PCM) that measures process variability is described. It is implemented in a 65 nm dual-oxide triple-Vt bulk CMOS process and it measures 0.41 mm2.
Keywords :
low-power electronics; nanoelectronics; process monitoring; system-on-chip; Moore law; all-digital on-chip process control monitor; bulk CMOS process; exponential growth; low-power requirements; mobile devices; nanometer technologies; process variability measurement; shrinking geometries; subnanometer dimensions; ultra low-power multimillion gate SoC; CMOS process; CMOS technology; Circuits; Clocks; Inverters; Jitter; Logic; Monitoring; Phase change materials; Process control; Device mismatch; electrical variable measurements; process control; process variability; random variations; statistics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
Type :
conf
DOI :
10.1109/ICICDT.2009.5166296
Filename :
5166296
Link To Document :
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