• DocumentCode
    2563645
  • Title

    An on-chip process control monitor for process variability measurements in nanometer technologies

  • Author

    Klass, Fabian ; Jain, Ashish ; Hess, Greg

  • Author_Institution
    Apple Inc., Cupertino, CA, USA
  • fYear
    2009
  • fDate
    18-20 May 2009
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    Process variability has become a fundamental challenge in nanometer technologies. This trend is driven by Moore´s law, which governs the exponential growth of transistors in ICs, the low-power requirements of mobile devices (i.e., Vdd < 1 V), and the shrinking geometries of advanced technologies reaching the sub-nanometer dimensions. Understanding process variability is therefore key to successfully designing ultra low-power multi-million gate SoCs. An all-digital on-chip process control-monitor (PCM) that measures process variability is described. It is implemented in a 65 nm dual-oxide triple-Vt bulk CMOS process and it measures 0.41 mm2.
  • Keywords
    low-power electronics; nanoelectronics; process monitoring; system-on-chip; Moore law; all-digital on-chip process control monitor; bulk CMOS process; exponential growth; low-power requirements; mobile devices; nanometer technologies; process variability measurement; shrinking geometries; subnanometer dimensions; ultra low-power multimillion gate SoC; CMOS process; CMOS technology; Circuits; Clocks; Inverters; Jitter; Logic; Monitoring; Phase change materials; Process control; Device mismatch; electrical variable measurements; process control; process variability; random variations; statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4244-2933-2
  • Electronic_ISBN
    978-1-4244-2934-9
  • Type

    conf

  • DOI
    10.1109/ICICDT.2009.5166296
  • Filename
    5166296