DocumentCode
2563690
Title
Dynamic cache resizing architecture for high yield SOC
Author
Mohammad, Baker ; Rab, Muhammad Tauseef ; Mohammad, Khadir ; Suleman, M. Aater
Author_Institution
Qualcomm Inc., San Diego, CA, USA
fYear
2009
fDate
18-20 May 2009
Firstpage
211
Lastpage
214
Abstract
Dynamic cache resizing coupled with built in self test (BIST) is proposed to enhance yield of SRAM-based cache memory. BIST is used as part of the power-up sequence to identify the faulty memory addresses. Logic is added to prevent access to the identified locations, effectively reducing the cache size. Cache resizing approach can solve for as many faulty locations as the end user would like, while trading off on performance. Reliability and long term effect on memory such as pMOS NBTI issue is also compensated for by running BIST and implementing cache resizing architecture, hence detecting faults introduced over time. Since memory soft failures are worst at lower voltage operation dynamic cache resizing can be used to tradeoff power for performance. This approach supplements existing design time optimizations and adaptive design techniques used to enhance memory yield. Performance loss incurred due to the cache reduction is determined to be within 1%.
Keywords
SRAM chips; built-in self test; cache storage; logic design; system-on-chip; BIST; SOC design; SRAM-based cache memory; built-in self test; dynamic cache resizing architecture; pMOS NBTI; system-on-chip; Automatic testing; Built-in self-test; Cache memory; Design optimization; Fault detection; Fault diagnosis; Logic; Niobium compounds; Titanium compounds; Voltage; SOC design; caches; high yield; memory architecture; processors design; sram memory;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
978-1-4244-2933-2
Electronic_ISBN
978-1-4244-2934-9
Type
conf
DOI
10.1109/ICICDT.2009.5166298
Filename
5166298
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