The non-linear behavior of the Nothing On Insulator NOI nanotransistor from theoretical and numerical studies

A brief presentation of the NOI - Nothing On Insulator - nanotransistor, followed by two theoretical points of view concerning the NOI-FET non-linearity are presented in this paper. The main target is to prove the NOI nanotransistor affiliation to the FETs family, monitoring the gate-control on the drain current. The drain current is activated by the V_DS voltage under tunneling conditions. The gate terminal modulates the carriers concentration and consequently the drain current flow. Secondary, a new model parameter comes to complete the NOI-FET theory. The third order derivative was used for the extraction of a threshold drain-source voltage that splits the work domain in two conduction regions: weak and strong.