DocumentCode
2563724
Title
Turn-off failure mechanism in large area IGCTs
Author
Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Wikström, Tobias ; Nistor, Iulian
Author_Institution
Eng. Dept., Univ. of Cambridge, Cambridge, UK
Volume
2
fYear
2011
fDate
17-19 Oct. 2011
Firstpage
361
Lastpage
364
Abstract
The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.
Keywords
thyristors; dynamic avalanche current distribution; inductive switching conditions; integrated gate commutated thyristors; large area IGCT; turn-off failure mechanism; Anodes; Cathodes; Current density; Integrated circuit modeling; Load modeling; Logic gates; Thyristors; Integrated Gate Commutated Turn-off Thyristor; Large Area SOA;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2011 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-61284-173-1
Type
conf
DOI
10.1109/SMICND.2011.6095817
Filename
6095817
Link To Document