Title :
Self-aligned In0.53Ga0.47As MOSFETs with atomic layer deposited Al2O3, ZrO2, and stacked Al2O3/ZrO2 gate dielectrics
Author :
Zhao, Han ; Lee, Jack C.
Author_Institution :
Univ. of Texas at Austin, Austin, TX, USA
Abstract :
The scaling characteristics of self-aligned In0.53Ga0.47As n-MOSFETs with atomic layer deposited (ALD) Al2O3 and ZrO2 gate dielectrics are evaluated. Although ZrO2 shows promise of scalability to lower capacitance equivalent thickness (CET) compared to Al2O3, stacked bilayer Al2O3/ZrO2 gate dielectric enables further improvement in subthreshold swing and transconductance than single ZrO2 film. In addition, the bilayer design also shows further scalability with merely 5 Aring Al2O3 while improving the MOSFETs performance.
Keywords :
MOSFET; aluminium compounds; atomic layer deposition; capacitance; dielectric materials; indium compounds; zirconium compounds; Al2O3; Al2O3-ZrO2; In0.53Ga0.47As; MOSFET; ZrO2; atomic layer deposition; capacitance equivalent thickness; gate dielectrics; Aluminum oxide; Atomic layer deposition; Current density; Dielectric substrates; III-V semiconductor materials; Indium gallium arsenide; Lifting equipment; MOSFET circuits; Scalability; Transconductance; Al2O3; InGaAs; MOSFETs; ZrO2;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166302
