ZnSe films prepared by the close-spaced sublimation and their influence on ZnSe/CdTe solar cell performance

Author

Spalatu, Nicolae ; Serban, Dormidont ; Potlog, Tamara

Author_Institution

Phys. Dept., Moldova State Univ., Chisinau, Moldova

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

451

Lastpage

454

Abstract

This paper focuses on physical properties of ZnSe thin films and photovoltaic parameters of ZnSe/CdTe thin film solar cells. X-ray analysis and SEM images show that ZnSe films are polycrystalline and exhibit wurtzite-zinc-blende structure. ZnSe/CdTe solar cells show an efficiency of about 4.7%. The external quantum efficiency (EQE) for these cells shows that the shape of these characteristics depends on ZnSe layer thickness. The incorporation of Zn at the ZnSe and CdTe interface, for the first time, doubles the short circuit current density and improves the performance of ZnSe/CdTe thin film solar cells.

Keywords

II-VI semiconductors; X-ray analysis; cadmium compounds; current density; photovoltaic effects; scanning electron microscopy; semiconductor thin films; solar cells; sublimation; wide band gap semiconductors; zinc compounds; SEM images; SiO₂; X-ray analysis; ZnSe; ZnSe layer thickness; ZnSe thin films; ZnSe-CdTe; ZnSe-CdTe solar cell performance; close-spaced sublimation; external quantum efficiency; photovoltaic parameters; polycrystalline films; scanning electron microscopy; short circuit current density; solar cell efficiency; wurtzite-zinc-blende structure; Films; Glass; Heterojunctions; Photonic band gap; Photovoltaic cells; Substrates; Zinc; CdTe thin films; ZnSe; quantum efficiency; thin film solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095844

Filename

6095844