Title :
Electrical properties of thermally annealed CdS thin films obtained by chemical bath deposition
Author :
Scortescu, D. ; Maticiuc, N. ; Nicorici, V. ; Spalatu, N. ; Potlog, Tamara ; Hiie, J. ; Valdna, V.
Author_Institution :
Phys. Dept., Moldova State Univ., Chisinau, Moldova
Abstract :
Electrical conductivity and the Hall-effect are investigated in the temperature interval (80-400) K on thermally annealed in H2 CdS thin films obtained by chemical bath deposition. Different characters of the temperature dependence of conductibility are observed in the CdS films annealed at different temperatures. The Hall measurements allow calculating the values of the NA, ND, nex and ED. According to Hall measurements the CdS films show several donor levels at different energetic depths in dependence of the annealing temperature. The sample annealed at high temperatures than 350°C proves to be compensated with a sharply decreasing electrical conductivity with the temperature decrease.
Keywords :
Hall effect; II-VI semiconductors; annealing; cadmium compounds; electrical conductivity; high-temperature effects; impurity states; liquid phase deposition; semiconductor growth; semiconductor thin films; wide band gap semiconductors; CdS; Hall-effect; chemical bath deposition; donor levels; electrical conductivity; electrical properties; energetic depths; temperature 80 K to 100 K; thermal annealing; thin films; Annealing; Conductivity; Films; Impurities; Temperature; Temperature dependence; Temperature measurement; CBD method; CdS thin films; Hall coefficient; conductivity;
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-61284-173-1
DOI :
10.1109/SMICND.2011.6095845
