Title :
The principles of obtaining stable semiconducting compositions and reliable anti-corona designs for high voltage windings
Author :
Malamud, R. ; Cheremisov, I. ; Shumovskaya, G. ; Stepanova, T.
fDate :
May 31 2009-June 3 2009
Abstract :
This paper covers the work carried out at the Research and Development Department of the plant ldquoElectrotyazhmashrdquo, Ukraine for developing reliable anti-corona systems for high voltage generator windings up to 24 kV. The work included estimating the necessity of application of the slot parts semiconducting system and calculation of its parameters; developing the anti-corona protection design for the end turns of windings that would be reliable in the manufacture and in operation at Power Stations; and developing stable semiconducting materials for anti-corona design realization. The main principles of obtaining reliable anti-corona designs and stable semiconducting composition were elaborated. The developed anti-corona system was implemented on turbo generators of power 200, 300, and 500 MW with windings of 15.75, 20 and 24 kV, hydro generators of 20...400 MW with windings of 13.8 and 15.75 kV, and pump motor generators of 40, 210 and 420 MW with windings of 10.5 and 15.75 kV. All generators have been working successfully in operation. The Power Stations (and plant "Electrotyazhmash") have not had any problems with the slot discharges or visual corona and discharges on end turn of windings for last 30 years that the generators with developed anti-corona system have been in use.
Keywords :
air gaps; corona; electric generators; high-voltage techniques; machine insulation; machine protection; semiconductor materials; stators; high voltage generator windings; power 200 MW; power 210 MW; power 300 MW; power 40 MW; power 420 MW; power 500 MW; reliable anti-corona designs; stable semiconducting compositions; voltage 10.5 kV; voltage 15.75 kV; voltage 20 kV; voltage 24 kV; Materials reliability; Power generation; Power system protection; Power system reliability; Research and development; Semiconductivity; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor materials; Voltage;
Conference_Titel :
Electrical Insulation Conference, 2009. EIC 2009. IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-3915-7
Electronic_ISBN :
978-1-4244-3917-1
DOI :
10.1109/EIC.2009.5166328