Theoretical analysis of temperature dependence of material parameters in GaAsSbN/GaAs intersubband quantum wells

Author

Aissat, Abdelkader ; Chenini, Lynda ; Ammi, S.

Author_Institution

LASICOM Lab., Saad Dahlab Univ., Blida, Algeria

fYear

2014

fDate

14-16 April 2014

Firstpage

1520

Lastpage

1523

Abstract

The effect of temperature on the intersubband transition energy and the intersubband gain characteristics of GaAsSbN/GaAs quantum well lasers are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in gain is observed for GaAsSbN/GaAs when increasing temperature. Our calculations show that the increase in temperature causes a decrease in gain and a shift towards short wavelengths, for an increase of 150K; the gain is shifted by 4.56 μm and reduced by approximately 64.86%.

Keywords

III-V semiconductors; carrier density; gallium arsenide; indium compounds; quantum well lasers; spectral line shift; thermo-optical effects; wide band gap semiconductors; GaAsSbN-GaAs; band-anti-crossing model; carrier density; effective mass; gain shift; intersubband gain characteristics; intersubband quantum wells; intersubband transition energy; material parameters; optical gain; temperature dependence; Gallium arsenide; Laser theory; Lattices; Metals; Nitrogen; Radiative recombination; Semiconductor lasers; dilute nitrides; optoelectronic; strained quantum wells; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Computing and Systems (ICMCS), 2014 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4799-3823-0

Type

conf

DOI

10.1109/ICMCS.2014.6911320

Filename

6911320