Gb/s fiber optic link adapter chip set

Author

Ewen, J.F. ; Rogers, D.L. ; Widmer, A.X. ; Gfeller, F. ; Anderson, C.J.

Author_Institution

IBM Res., Yorktown Heights, NY, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

11

Lastpage

14

Abstract

A pair of chips containing all of the required high-speed analog and digital circuitry for a fiber-optic date link with byte-wide interfaces, has been designed, fabricated, and tested at 1 Gb/s using a 1- mu m E/D (enhancement/depletion) MESFET technology. The transmitter chip takes a byte-wide parallel data stream and converts it to a serial signal suitable for driving a laser diode. The receiver chip takes an optical input and provides a retimed parallel data output synchronized with byte boundaries. It is concluded that such chips will find applications in computer data communication where packaging density and cost are important issues.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical communication equipment; 1 Gbit/s; 1 micron; E/D MESFET technology; GaAs; byte-wide interfaces; byte-wide parallel data stream; computer data communication; cost; fiber optic link adapter chip set; fiber-optic date link; packaging density; pair of chips; receiver chip; retimed parallel data output; semiconductors; serial signal; transmitter chip; Application software; Circuit testing; Computer applications; Diode lasers; High speed optical techniques; MESFET circuits; Optical fiber testing; Optical fibers; Optical receivers; Optical transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11012

Filename

11012