Direct thermal strain measurements in electronic packages

Author

Bastawros, Adel F. ; Voloshin, Arkady S.

Author_Institution

Dept. of Mech. Eng. & Mech., Lehigh Univ., Bethlehem, PA, USA

fYear

1990

fDate

6-8 Feb 1990

Firstpage

25

Lastpage

32

Abstract

The fractional fringe moire interferometry full field deformation monitoring technique, which has been successfully implemented for accurate measurement of thermally induced strains in electronic packages, is discussed. Its applicability to thermal stress analysis of microelectronic devices is considered. Illustrative examples of measured thermal strain distributions in devices subjected to steady-state as well as transient thermal loading histories are also discussed. Such distributions are arrived at accurately and realistically. The technique possesses an excellent potential for addressing several reliability problems in microelectronics and becoming a basic strain analysis tool in that arena

Keywords

light interferometry; moire fringes; packaging; strain measurement; direct thermal strain measurements; electronic packages; fractional fringe moire interferometry; full field deformation monitoring technique; measurement of thermally induced strains; microelectronic devices; reliability problems; steady state thermal loading; strain analysis tool; thermal strain distributions; thermal stress analysis; transient thermal loading; Capacitive sensors; Electronic packaging thermal management; History; Interferometry; Microelectronics; Monitoring; Steady-state; Strain measurement; Thermal loading; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal and Temperature Measurement Symposium, 1990. SEMI-THERM VI, Proceedings., Sixth Annual IEEE

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/STHERM.1990.68485

Filename

68485