Monolithic HEMT LNAS for radar, EW, and COMM

Author

Upton, M.A.G. ; Snow, K.H. ; Goldstick, D.I. ; Kong, W.M. ; Kao, M.-Y. ; Kopp, W.F. ; Ho, P. ; Tessmer, G.J. ; Lee, B.R. ; Wypych, K.A. ; Jabra, A.A.

Author_Institution

GE Electron. Lab., Syracuse, NY, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

193

Abstract

Several monolithic HEMT (high electron mobility transistors) low-noise amplifiers (LNAs), designed for 7-11-GHz airborne radar, 2-18-GHz electronic warfare, and 20-GHz military satellite communications applications have demonstrated outstanding performance. Two-stage MMICs (monolithic microwave integrated circuits) achieve as low as 1.2 dB noise figure at 10 GHz with 15 dB gain, and typically less than 1.8 dB noise figure from 7-11 GHz. A distributed amplifier demonstrates 3.0-5.2 dB noise figure with around 11 dB gain from 2-18 GHz. Finally, a three-stage MMIC achieves less than 2.0 dB noise figure from 18-23 GHz with 29 dB associated gain, representing the highest level of performance yet reported for a low-noise MMIC.<>

Keywords

MMIC; electronic warfare; high electron mobility transistors; microwave amplifiers; radar equipment; satellite relay systems; 1.2 dB; 1.8 dB; 11 dB; 15 dB; 2 to 18 GHz; 20 GHz; 29 dB; 3.0 to 5.2 dB; 7 to 11 GHz; MMICs; airborne radar; distributed amplifier; electronic warfare; low-noise amplifiers; military satellite communications applications; monolithic HEMT; noise figure; Airborne radar; Electronic warfare; Gain; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Military satellites; Noise figure; Spaceborne radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38700

Filename

38700