Title :
Monolithic V-band pseudomorphic-MODFET low-noise amplifiers
Author :
Metze, G. ; Cornfeld, A. ; Singer, J. ; Carlson, H. ; Chang, E. ; Kirkendall, T. ; Dahrooge, G. ; Bass, J. ; Hung, H.-L. ; Lee, T.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
V-band, low noise MMICs (monolithic microwave integrated circuits) based on pseudomorphic modulation doped FETs (P-MODFETs) have been developed, and have yielded noise figures that are believed to be the lowest reported for any millimeter-wave MMIC. Single-stage low noise amplifiers with P-MODFETs as active elements (gate dimensions 0.35*60 mu m) exhibited minimum noise figures of 3.9 dB at 58 GHz, with an associated gain of 3.5 dB. Dual-stage MMICs had minimum noise figures of 5.3 dB at 58 GHz, with an associated gain of 8.2 dB, and maximum gain of 10.4 dB at 59.5 GHz. Further, a cascaded four-stage amplifier (two dual-stage MMIC modules) exhibited a 5.8-dB minimum noise figure at 58 GHz, with an associated gain of 18.3 dB, and 21.1 dB of maximum gain. Device processing uniformity and DC and RF reliability data are also presented.<>
Keywords :
MMIC; cascade networks; electron device noise; high electron mobility transistors; microwave amplifiers; 10.4 dB; 18.3 dB; 21.1 dB; 3.5 dB; 3.9 dB; 5.3 dB; 5.8 dB; 58 GHz; 59.5 GHz; 8.2 dB; P-MODFETs; V-band; cascaded four-stage amplifier; dual-stage amplifiers; low noise MMICs; low noise amplifiers; noise figures; pseudomorphic modulation doped FETs; reliability data; single-stage amplifiers; Epitaxial layers; Gain; Integrated circuit noise; Integrated circuit yield; Low-noise amplifiers; MMICs; Microwave FET integrated circuits; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38701
