DocumentCode
2564802
Title
A monolithic 40-GHz HEMT low-noise amplifier
Author
Yuen, C. ; Nishimoto, C. ; Bandy, S. ; Zdasiuk, G.
Author_Institution
Varian Res. Center, Palo Alto, CA, USA
fYear
1989
fDate
13-15 June 1989
Firstpage
205
Abstract
A monolithic, single-stage HEMT (high-electron-mobility transistor) low-noise amplifier has been developed at 40 GHz. This amplifier includes a single 0.25- mu m gate-length HEMT active device with on-chip matching and biasing circuits. A gain of 6.5 dB and a noise figure of 5 dB were measured from 38 to 44 GHz. By replacing the triangular gate profile with a mushroom gate profile the amplifier achieved 8-db gain and 4-dB noise figure from 36 to 42 GHz. The chip size is 1.1 mm*1.1 mm.<>
Keywords
MMIC; high electron mobility transistors; microwave amplifiers; 0.25 micron; 36 to 42 GHz; 38 to 44 GHz; 4 dB; 40 GHz; 5 dB; 6.5 dB; 8 dB; HEMT active device; HEMT low-noise amplifier; biasing circuits; gate-length; mushroom gate profile; on-chip matching; triangular gate profile; Distributed parameter circuits; Gain measurement; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Performance gain; Pulse amplifiers; Radiofrequency amplifiers; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38702
Filename
38702
Link To Document