Title :
External electro-optic probing of millimeter-wave integrated circuits
Author :
Whitaker, J.F. ; Valdmanis, J.A. ; Jackson, T.A. ; Bhasin, K.B. ; Romanofsky, R. ; Mourou, G.A.
Author_Institution :
Dept. of Electr. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
An external, noncontact electrooptic measurement system, designed to operate at the wafer level with conventional wafer probing equipment and without any special circuit preparation, has been developed. Measurements have demonstrated the system´s ability to probe continuous and pulsed signals on microwave integrated circuits on arbitrary substrates with excellent spatial resolution. In addition, it has been shown that the electrooptic probe tip can measure voltage values on an integrated circuit chip, even in areas where physical contact made by a test instrument would be inappropriate. Experimental measurements on a variety of digital and analog circuits, including a GaAs selectively doped heterostructure transistor prescaler, an NMOS silicon multiplexer, and a GaAs power amplifier MMIC (monolithic microwave integrated circuit) are reported.<>
Keywords :
electro-optical devices; integrated circuit testing; microwave integrated circuits; microwave measurement; probes; voltage measurement; GaAs; GaAs power amplifier MMIC; NMOS silicon multiplexer; electrooptic probe tip; microwave integrated circuits; millimeter-wave integrated circuits; noncontact electrooptic measurement system; selectively doped heterostructure transistor prescaler; spatial resolution; voltage measurement; wafer level; wafer probing equipment; Circuit testing; Gallium arsenide; Integrated circuit measurements; MMICs; Microwave integrated circuits; Microwave measurements; Millimeter wave integrated circuits; Probes; Pulse measurements; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38705