Title :
Nonlinear optical absorption in δ-MIGFET transistor modulated by electrical field and contact voltage
Author :
Oubram, Outmane ; Cisneros-Villalobos, Luis ; Limon Mendoza, Mario ; Ouadou, Mohamed ; Abatal, M. ; Elhamzaoui, Youness
Author_Institution :
Fac. de Cienc. Quimicas e Ingenierias, Univ. Autonoma del Estado de Morelos, Cuernavaca, Mexico
Abstract :
The theoretical study of linear and nonlinear optical absorption in a GaAs n-type δ-MIGFET transistor is preformed taking into account the effects of applied electric field and contact voltage. From our results, it is found that the position and the magnitude of the linear, nonlinear and total absorption coefficient are quite sensitive to electric field and voltage contact. Besides, the incident optical intensity has a great effect on these optical quantities. These properties are desirable for controlling the optical absorption in optical transistor application.
Keywords :
III-V semiconductors; electrical contacts; field effect transistors; gallium arsenide; GaAs n-type δ-MIGFET transistor; contact voltage; delta-multiple independent gate field effect transistor; electrical field; incident optical intensity; nonlinear optical absorption; optical absorption control; optical quantities; optical transistor; total absorption coefficient; Absorption; Doping; Gallium arsenide; Impurities; Integrated optics; Optical modulation; Optical sensors; δ-MIGFET; Electrical field; contact voltaje; intersubband optical absorption; transistor;
Conference_Titel :
Multimedia Computing and Systems (ICMCS), 2014 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4799-3823-0
DOI :
10.1109/ICMCS.2014.6911356
