DocumentCode
2565083
Title
Design and performance of a 2-18 GHz monolithic matrix amplifier
Author
Chang, A.P. ; Niclas, K.B. ; Cantos, B.D. ; Strifler, W.A.
Author_Institution
Watkins-Johnson Co., Palo Alto, CA, USA
fYear
1989
fDate
13-15 June 1989
Firstpage
287
Abstract
The authors discuss the design and the performance of a two-tier monolithic matrix amplifier. The amplifier utilizes eight MESFETs evenly distributed over two tiers. A gain of 15.5+or-0.9 dB at a worst return loss of -12 dB, a maximum noise figure of 7 dB, and a minimum output power of P/sub 1dB/=15.5 dBm were obtained in the two-tier module across the 2-18-GHz frequency band. A brief description of the circuit design and its fabrication is presented. The unit´s environmental behavior over the temperature range of -55 degrees C to +95 degrees C is also described.<>
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; wideband amplifiers; -12 dB; -55 to 95 degC; 15.5 dB; 2 to 18 GHz; 7 dB; MESFETs; circuit design; design; environmental behavior; maximum noise figure; minimum output power; monolithic matrix amplifier; performance; two-tier module; worst return loss; Circuit synthesis; Distributed amplifiers; Fabrication; Frequency; Gain; MESFETs; Noise figure; Power amplifiers; Power generation; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38719
Filename
38719
Link To Document