Title :
100 GHz on-wafer S-parameter measurements by electrooptic sampling
Author :
Majidi-Ahy, R. ; Auld, B.A. ; Bloom, D.M.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
The authors describe an electrooptic sampling system with a measurement bandwidth in excess of 200 GHz for on-wafer millimeter-wave measurements. An active probe frequency-multiplier has been developed to supply the millimeter-wave stimulus signal to the device under test. On-wafer measurements of S-parameters of linear circuits, time-waveforms of nonlinear circuits, and propagation characteristics of uniplanar waveguides on GaAs to 100 GHz by direct electrooptic sampling have been demonstrated.<>
Keywords :
S-parameters; electro-optical devices; integrated circuit testing; microwave integrated circuits; microwave measurement; 100 GHz; 200 GHz; GaAs; S-parameter measurements; active probe frequency-multiplier; electrooptic sampling system; linear circuits; measurement bandwidth; millimeter-wave stimulus signal; nonlinear circuits; on-wafer millimeter-wave measurements; propagation characteristics; time-waveforms; uniplanar waveguides; Bandwidth; Circuit testing; Frequency; Linear circuits; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave propagation; Probes; Sampling methods; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38722
