DocumentCode :
2565186
Title :
Rare-metal free thin film solar cell
Author :
Katagiri, Hironori ; Nishimura, Masato ; Onozawa, Takeshi ; Maruyama, Shinichi ; Fujita, Masato ; Sega, Toshiyuki ; Watanabe, Taku
Author_Institution :
Nagaoka Nat. Coll. of Technol., Japan
Volume :
2
fYear :
1997
fDate :
3-6 Aug 1997
Firstpage :
1003
Abstract :
Cu2ZnSnS4 (CZTS) thin films have been successfully formed on a soda lime glass substrate by vapor phase sulfurization of precursors of E-B evaporation. This semiconductor does not contain any rare-metal such as indium. In this study, we estimated the optical band gap energy as 1.45 eV and the optical absorption coefficient was in the order of 104 cm-1. From these optical properties, this CZTS film is very suitable for thin film solar cells. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/soda lime glass, showed an open circuit voltage up to 522 mV
Keywords :
absorption coefficients; copper compounds; electron beam deposition; energy gap; optical properties; semiconductor thin films; solar cells; ternary semiconductors; vapour deposited coatings; zinc compounds; 1.45 eV; 522 mV; Al/ZnO/CdS/CZTS/Mo/soda lime glass; Cu2ZnSnS4; Cu2ZnSnS4 thin films; E-B evaporation; open circuit voltage; optical absorption coefficient; optical band gap energy; optical properties; thin film solar cell; vapor phase sulfurization; Absorption; Glass; Indium; Optical films; Photonic band gap; Photovoltaic cells; Semiconductor thin films; Substrates; Thin film circuits; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Conversion Conference - Nagaoka 1997., Proceedings of the
Conference_Location :
Nagaoka
Print_ISBN :
0-7803-3823-5
Type :
conf
DOI :
10.1109/PCCON.1997.638392
Filename :
638392
Link To Document :
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