Rare-metal free thin film solar cell

Author

Katagiri, Hironori ; Nishimura, Masato ; Onozawa, Takeshi ; Maruyama, Shinichi ; Fujita, Masato ; Sega, Toshiyuki ; Watanabe, Taku

Author_Institution

Nagaoka Nat. Coll. of Technol., Japan

Volume

2

fYear

1997

fDate

3-6 Aug 1997

Firstpage

1003

Abstract

Cu₂ZnSnS₄ (CZTS) thin films have been successfully formed on a soda lime glass substrate by vapor phase sulfurization of precursors of E-B evaporation. This semiconductor does not contain any rare-metal such as indium. In this study, we estimated the optical band gap energy as 1.45 eV and the optical absorption coefficient was in the order of 10⁴ cm^-1. From these optical properties, this CZTS film is very suitable for thin film solar cells. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/soda lime glass, showed an open circuit voltage up to 522 mV

Keywords

absorption coefficients; copper compounds; electron beam deposition; energy gap; optical properties; semiconductor thin films; solar cells; ternary semiconductors; vapour deposited coatings; zinc compounds; 1.45 eV; 522 mV; Al/ZnO/CdS/CZTS/Mo/soda lime glass; Cu₂ZnSnS₄; Cu₂ZnSnS₄ thin films; E-B evaporation; open circuit voltage; optical absorption coefficient; optical band gap energy; optical properties; thin film solar cell; vapor phase sulfurization; Absorption; Glass; Indium; Optical films; Photonic band gap; Photovoltaic cells; Semiconductor thin films; Substrates; Thin film circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Conversion Conference - Nagaoka 1997., Proceedings of the

Conference_Location

Nagaoka

Print_ISBN

0-7803-3823-5

Type

conf

DOI

10.1109/PCCON.1997.638392

Filename

638392