Title :
Modeling and analysis of GaAs MESFETs considering the wave propagation effect
Author :
Chang, R.L. ; Shieh, T.J. ; Davis, W.A. ; Carter, R.L.
Author_Institution :
CADENCE Design Syst. Inc., San Jose, CA, USA
Abstract :
The effect of wave propagation along the electrodes of a GaAs MESFET is studied using a distributed circuit analysis technique. Each unit equivalent circuit consists of two subequivalent circuits, one modeling the transmission-line properties of the coupled gate and drain electrodes, and the other representing the traditional GaAs MESFET small-signal model. The distributed equivalent circuit is then analyzed using SUPER-COMPACT. The maximum available power gain or the maximum stable power gain of the device is calculated as a function of device width. It is shown that, for single-gate MESFETs over 100 mu m wide, the transmission-line properties of the electrodes have a significant effect on the transistor performance. The power gain also depends on where the input signal is fed and where the output signal is extracted.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; MESFETs; SUPER-COMPACT; coupled gate; distributed circuit analysis technique; drain electrodes; input signal; power gain; small-signal model; subequivalent circuits; transistor performance; transmission-line properties; unit equivalent circuit; wave propagation effect; Circuit analysis; Coplanar waveguides; Distributed parameter circuits; Electrodes; Equivalent circuits; Frequency; Gallium arsenide; MESFETs; Power transmission lines; Strips;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38742
