Title :
Heterojunction bipolar transistors for high efficiency power amplifiers
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
Heterojunction bipolar transistors (HBTs) using AlGaAs/GaAs have been developed for use in microwave and millimeter-wave amplifiers. These transistors, which offer high gain and high efficiency for power amplifiers, have been fabricated using simple lithography (device features of 1 mu m or above). Without requiring submicrometer dimensions, the device has ample gain to trade for efficiency and a very low 1/f noise level. The state of the art of HBT development is reviewed, with particular attention given to gain vs. frequency, efficiency vs. collector-layer thickness, power density, and thermal considerations.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; bipolar transistors; gallium arsenide; microwave amplifiers; power amplifiers; AlGaAs-GaAs; HBTs; MMIC; collector-layer thickness; efficiency; frequency; gain; heterojunction bipolar transistors; high efficiency power amplifiers; low 1/f noise level; millimeter-wave amplifiers; power density; semiconductors; thermal considerations; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Lithography; Microwave amplifiers; Microwave devices; Microwave transistors; Millimeter wave transistors; Noise level;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11017
