CAD and performance of the ultrawide-band GaAs FET amplifiers

Author

Sun Shiying ; Han Bin ; Wu Chucheng ; Zhang Xiaohung

Author_Institution

Dept. of Electron. Eng., Jiaotong Univ., China

fYear

1989

fDate

13-15 June 1989

Firstpage

401

Abstract

The effect of feedback elements on noise figure is discussed in connection with ultrawideband GaAs FET amplifiers. Numerical analysis clearly shows the contribution of each sensitive element to the noise figure and to other performance characteristics. A circuit analysis method concerned with three-structured circuits is proposed. This method makes it possible to quickly and efficiently analyze microwave two-port circuits which contain feedback networks and T branches. As an example, three experimental amplifier modules have been developed that cover the frequency bands 1.4-11.7 GHz, 2-10 GHz, and 1.5-6.25 GHz.<>

Keywords

III-V semiconductors; circuit CAD; field effect transistors; microwave amplifiers; multiport networks; solid-state microwave circuits; 1.4 to 11.7 GHz; 1.5 to 6.25 GHz; 2 to 10 GHz; CAD; FET amplifiers; GaAs; T branches; circuit analysis method; feedback elements; microwave two-port circuits; noise figure; three-structured circuits; ultrawideband amplifiers; Circuit analysis; Feedback circuits; Frequency; Gallium arsenide; Microwave FETs; Microwave circuits; Microwave theory and techniques; Noise figure; Numerical analysis; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38750

Filename

38750