Title :
CAD and performance of the ultrawide-band GaAs FET amplifiers
Author :
Sun Shiying ; Han Bin ; Wu Chucheng ; Zhang Xiaohung
Author_Institution :
Dept. of Electron. Eng., Jiaotong Univ., China
Abstract :
The effect of feedback elements on noise figure is discussed in connection with ultrawideband GaAs FET amplifiers. Numerical analysis clearly shows the contribution of each sensitive element to the noise figure and to other performance characteristics. A circuit analysis method concerned with three-structured circuits is proposed. This method makes it possible to quickly and efficiently analyze microwave two-port circuits which contain feedback networks and T branches. As an example, three experimental amplifier modules have been developed that cover the frequency bands 1.4-11.7 GHz, 2-10 GHz, and 1.5-6.25 GHz.<>
Keywords :
III-V semiconductors; circuit CAD; field effect transistors; microwave amplifiers; multiport networks; solid-state microwave circuits; 1.4 to 11.7 GHz; 1.5 to 6.25 GHz; 2 to 10 GHz; CAD; FET amplifiers; GaAs; T branches; circuit analysis method; feedback elements; microwave two-port circuits; noise figure; three-structured circuits; ultrawideband amplifiers; Circuit analysis; Feedback circuits; Frequency; Gallium arsenide; Microwave FETs; Microwave circuits; Microwave theory and techniques; Noise figure; Numerical analysis; Ultra wideband technology;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38750
