Microwave characteristics of MBE grown resonant tunneling devices

Author

Owens, J.M. ; Halchin, D.J. ; Lear, K.L. ; Lee, W.S. ; Harris, J.S., Jr.

Author_Institution

Santa Clara Univ., CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

471

Abstract

Resonant tunnel devices grown by molecular-beam epitaxy (MBE) have been measured experimentally using network analysis techniques from 130 MHz to 20 GHz. A circuit model for the devices has been extracted for two different InGaAs well structures at a fixed bias point, which fits the measured data well and is useful for circuit design. Additionally, the device impedance has been measured as a function of bias at a fixed frequency point. Complicated capacitance characteristics were observed for the devices with large-indium-content wells.<>

Keywords

III-V semiconductors; capacitance; electric impedance; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; tunnel diodes; 130 MHz to 20 GHz; InGaAs well structures; MBE; bias point; capacitance characteristics; circuit model; device impedance; network analysis techniques; resonant tunneling devices; Capacitance-voltage characteristics; Circuit synthesis; Data mining; Frequency measurement; Impedance measurement; Indium gallium arsenide; Microwave devices; Molecular beam epitaxial growth; Resonant tunneling devices; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38768

Filename

38768