Title :
S-band eight watt power amplifier MMICs
Author_Institution :
Gen. Electr. Co., Syracuse, NY, USA
Abstract :
The design and performance of a pair of S-band GaAs MMIC (monolithic microwave integrated-circuit) power amplifier chips with greater than 8.0-W power output are reported. The design, fabricated in 1.0- mu m-gate-length epitaxial technology, also has 26% power-added efficiency at 3.7 GHz and 8.0 W, and up to 31% at lower drain bias. The 0.5- mu m-gate-length selective implant design is capable of an output of 6.0 to 8.3 W from 2.8 GHz to 4.8 GHz. A Wilkinson power-combined pair of MMICs has delivered 12 W at 21% power-added efficiency from 3.1 to 3.5 GHz, and 13.5 W with increased drain voltage.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; integrated circuit technology; microwave amplifiers; power amplifiers; 0.5 micron; 1 micron; 13.5 W; 2.8 to 4.8 GHz; 26 to 31 percent; 8 W; GaAs; MMIC; S-band; UHF; Wilkinson power-combined pair of MMICs; drain bias; drain voltage; performance; power amplifier chips; power output; power-added efficiency; selective implant design; semiconductors; Bandwidth; Circuit synthesis; FETs; Gallium arsenide; Impedance; Implants; MESFETs; MMICs; Power amplifiers; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11020
