Title :
Monolithic millimeter wave CPW circuits
Author :
Riaziat, M. ; Par, E. ; Zdasiuk, G. ; Bandy, S. ; Glenn, M.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
Three monolithic circuits were designed and fabricated on GaAs substrates using CPW (coplanar waveguide) transmission lines. These circuits consist of two amplifiers and a frequency doubler and demonstrate the application of CPW in the Ka band. The active device used in these circuits is a 0.25- mu m-gate AlGaAs high-electron-mobility transistor defined by electron-beam lithography. Transmission line and substrate dimensions are chosen to avoid interaction with extraneous modes. The cascode configuration is shown to be a convenient gain element for use with CPW circuits where low-inductance RF grounding of the second gate is easily achieved. It is shown that CPWs are well enough characterized to be used in sensitive millimeter-wave circuits.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; frequency multipliers; gallium arsenide; microwave amplifiers; waveguide components; 0.25 micron; AlGaAs-GaAs; CPW transmission lines; GaAs substrates; Ka band; amplifiers; cascode configuration; electron-beam lithography; frequency doubler; high-electron-mobility transistor; low-inductance RF grounding; monolithic MM-wave coplanar waveguide circuits; sensitive millimeter-wave circuits; substrate dimensions; Coplanar transmission lines; Coplanar waveguides; Distributed parameter circuits; Frequency; Gallium arsenide; HEMTs; Lithography; MODFETs; Millimeter wave circuits; Millimeter wave transistors;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38781
