Demonstration of Lateral IGBTs in 4H-SiC

Author

Kuan-Wei Chu ; Wen-Shan Lee ; Chi-Yin Cheng ; Chih-Fang Huang ; Feng Zhao ; Lurng-Shehng Lee ; Young-Shying Chen ; Chwan-Ying Lee ; Min-Jinn Tsai

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

286

Lastpage

288

Abstract

Lateral insulated gate bipolar transistors (IGBTs) in 4H-SiC are demonstrated for the first time. The devices were fabricated based on three different designs to investigate the effects of buffer doping and carrier lifetime on device performance. Experimental results show that, with a lightly doped buffer, a short drift region length, and an improved carrier lifetime, the common base current gain of the parasitic bipolar junction transistor (BJT) is improved, leading to a higher current capability of the IGBT. The differential on-resistance of the lateral IGBT with Ld = 20 μm is smaller than that of a lateral MOSFET counterpart, implying partial conductivity modulation in the drift region.

Keywords

MOSFET; insulated gate bipolar transistors; semiconductor doping; silicon compounds; SiC; buffer doping effects; carrier lifetime effects; lateral IGBT; lateral MOSFET; lateral insulated gate bipolar transistors; lightly doped buffer; parasitic BJT; parasitic bipolar junction transistor; partial conductivity modulation; short drift region length; Charge carrier lifetime; Insulated gate bipolar transistors; Logic gates; MOSFET circuits; Silicon carbide; Temperature; Common base current gain; high voltage; insulated gate bipolar transistor (IGBT); silicon carbide (SiC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2230240

Filename

6407724