Computer-aided design of MESFET distributed amplifier

Author

Vai, M.-K. ; Prasad, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

565

Abstract

An automatic computer-aided design procedure for the design of a metal-semiconductor field-effect transistor (MESFET) distributed amplifier is described. This procedure is based on a novel design method called design-by-simulation. Simulated annealing is applied in this design procedure to provide information about the number of stages, the MESFET model parameters, and the characteristics of microstrips used for matching networks in an amplifier which matches the desired frequency response. This procedure is fully automatic, and the only input needed is the desired gain and the 1-dB point. The implementation, testing, and evaluation of the proposed technique are discussed.<>

Keywords

MMIC; Schottky gate field effect transistors; circuit CAD; field effect integrated circuits; microwave amplifiers; MESFET distributed amplifier; automatic computer-aided design procedure; frequency response; gain; matching networks; microstrips; model parameters; testing; Computational modeling; Design automation; Design methodology; Distributed amplifiers; FETs; Frequency response; MESFETs; Microstrip; Simulated annealing; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38790

Filename

38790