Computer-aided design of class-C microwave transistor amplifiers by direct numerical optimization

Author

Rizzoli, V. ; Cecchetti, C. ; Costanzo, A.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

1989

fDate

13-15 June 1989

Firstpage

585

Abstract

The authors outline a straightforward procedure for microwave class-C amplifier design. They discuss an empirical bipolar junction transistor model of an enhanced Ebers-Moll type, allowing an accurate simulation of the device performance in the power saturation region. They describe the use of this model in conjunction with a general-purpose harmonic-balance simulator to provide a direct numerical optimization capability for the class-C amplifier. As an illustrative example, they report on the simulation of a practical microwave-integrated-circuit amplifier built on a Teflon-fiberglass substrate.<>

Keywords

bipolar transistors; circuit CAD; microwave amplifiers; microwave integrated circuits; semiconductor device models; Teflon-fiberglass substrate; class-C microwave transistor amplifiers; direct numerical optimization; empirical bipolar junction transistor model; enhanced Ebers-Moll type; microwave-integrated-circuit amplifier; power saturation region; Circuit simulation; Computational modeling; Design automation; Design optimization; Microwave amplifiers; Microwave integrated circuits; Microwave transistors; Power amplifiers; Power system modeling; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38795

Filename

38795