Title :
Combined pulsed neutron and flash X-ray radiation effects in GaAs MMICs
Author :
Anderson, W.T. ; Harrison, R.C. ; Gerdes, J. ; Beall, J.M. ; Roussos, J.A.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
A study was made of combined radiation effects in GaAs MMICs (microwave monolithic integrated circuits) to separate the transient effects of pulsed neutron and gamma radiation GaAs FETs and MMICs were measured in three radiation environments: pulsed neutron, flash X-ray, and combined pulsed neutron and flash X-ray. Synergistic effects were measured under combined pulsed irradiation. Evidence is presented for short-term lattice annealing of pulsed-neutron-induced displacement damage. Specifically, it appears that a small amount of the neutron-induced lattice damage anneals out at room temperature because the drain current recovers strongly at 3 ms and continues to recover out to about 100 ms.<>
Keywords :
III-V semiconductors; MMIC; X-ray effects; field effect integrated circuits; field effect transistors; gallium arsenide; gamma-ray effects; neutron effects; radiation hardening (electronics); 3 to 100 ms; GaAs; GaAs FETs; GaAs MMICs; combined pulsed irradiation; combined pulsed neutron and flash X-ray; combined radiation effects; drain current recovers; flash X-ray; flash X-ray radiation effects; microwave monolithic integrated circuits; pulsed gamma radiation; pulsed neutron; pulsed neutron radiation effects; pulsed-neutron-induced displacement damage; radiation damage; radiation environments; room temperature; semiconductors; short-term lattice annealing; synergistic effects; transient effects; Annealing; Gallium arsenide; Integrated circuit measurements; Lattices; MMICs; Monolithic integrated circuits; Neutrons; Pulse circuits; Pulse measurements; Radiation effects;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11022
