GaAs FET MMIC switch reliability

Author

Ersland, P. ; Lanteri, J.-P.

Author_Institution

M/A-COM Adv. Semicond. Div., Lowell, MA, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

57

Lastpage

60

Abstract

The results of reliability tests on a GaAs FET monolithic microwave integrated circuit (MMIC) switch are presented. Accelerated life tests were performed under both high-temperature reverse-biased (HTRB) and RF-biased conditions. The dominant failure mode observed is an increase in the switch insertion loss. A high reliability level is demonstrated; a mean-time to failure (MTTF) of 4*10/sup 7/ hours at a temperature of 125 degrees C is predicted from statistical analysis of the results. The failure mechanism identified is gate metal interdiffusion into GaAs, with a log-normal failure distribution and an activation energy of 1.34 eV.<>

Keywords

III-V semiconductors; MMIC; chemical interdiffusion; environmental testing; failure analysis; field effect integrated circuits; gallium arsenide; life testing; reliability; semiconductor device testing; semiconductor switches; 1.34 eV; 125 C; 4E7 h; GaAs; GaAs FET MMIC switch reliability; HTRB; MTTF; RF-biased conditions; accelerated life tests; activation energy; failure mechanism; failure mode; gate metal interdiffusion; high-temperature reverse-biased; log-normal failure distribution; mean-time to failure; monolithic microwave integrated circuit; reliability level; reliability tests; semiconductors; statistical analysis; switch insertion loss; temperature; Circuit testing; FET integrated circuits; Field effect MMICs; Gallium arsenide; Integrated circuit reliability; Integrated circuit testing; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11023

Filename

11023