Scaling and dielectric stress compensation of ultrasensitive boron-doped silicon microstructure

The scaling of boron-doped silicon membranes based on diaphragm dimensions and stress compensation is characterized. Devices with varying edge length and plate thickness are fabricated and tested for sensitivity. The stress for p++ silicon, LPCVD silicon dioxide, and LPCVD silicon nitride is measured using an electrostatic technique, that uses silicon microbridges. Silicon membranes with varying thickness of oxide and nitride are characterized for sensitivity. The results confirm a previously reported analytical scaling theory for the structures. Based on this theory, scaled experimental devices are found to show sensitivities within three percent of the calculated design targets