Title :
Design and performance of a 94 GHz HEMT mixer
Author :
Chow, P.D. ; Garske, D. ; Velebir, J. ; Hsieh, E. ; Ngan, Y.C. ; Yen, H.C.
Author_Institution :
TRW Electron. Syst. Group, Redondo Beach, CA, USA
Abstract :
A 94-GHz HEMT (high-electron-mobility transistor) mixer was designed and fabricated using a 0.1- mu m-gate HEMT device and a hybrid microwave integrated circuit. The mixer downconverts the 92-96-GHz RF to a 8-12-GHz IF (intermediate frequency). At 4-dBm LO (local oscillator) drive, the mixer showed 5.8-dB conversion loss, 12.4-dB noise figure, and -3.2-dBm input power at the 1-dB gain compression point. The HEMT mixer is suitable for a 94-GHz missile seeker application where available W-band LO power is extremely low. The HEMT mixer can be monolithically integrated with a HEMT low-noise amplifier to form a low-cost, small-size, and low-weight receiver front end for use in millimeter-wave smart munitions.<>
Keywords :
high electron mobility transistors; hybrid integrated circuits; microwave integrated circuits; military equipment; mixers (circuits); 1 micron; 12.4 dB; 5.8 dB; 8 to 12 GHz; 92 to 96 GHz; EHF; HEMT mixer; SHF; W-band LO power; conversion loss; down conversion; high-electron-mobility transistor; hybrid MIC; microwave integrated circuit; millimeter-wave smart munitions; missile seeker application; receiver front end; HEMTs; Hybrid integrated circuits; Local oscillators; MODFETs; Microwave devices; Microwave integrated circuits; Missiles; Mixers; Noise figure; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38828
