DocumentCode :
2566806
Title :
An 8Gb/s Transformer-Boosted Transmitter with >V/sub 00/ swing
Author :
Jintae Kim ; Hatamkhani, H. ; Chih-Kong Ken Yang
Author_Institution :
California Univ., Los Angeles, CA
fYear :
2006
fDate :
6-9 Feb. 2006
Firstpage :
283
Lastpage :
292
Abstract :
An 8 Gb/s serial-link transmitter that achieves >VDD signal swing without stressing the voltage tolerance of the transistors is presented. The high-frequency signal is boosted to large swings above the supply rail through multiple transformer coupling. The design is implemented in 1.2V 0.13mum CMOS technology. The prototype TX achieves 1.42VPP output swing with 1.16V on-chip VDD and draws 136mA. The S11 is less than -10dB for frequencies <4GHz
Keywords :
CMOS integrated circuits; radio transmitters; 0.13 micron; 1.16 V; 1.2 V; 1.42 V; 136 mA; 8 Gbit/s; CMOS technology; high-frequency signal; multiple transformer coupling; serial-link transmitter; signal swing; Boosting; Electrostatic discharge; Impedance; Inductance; Inductors; Mutual coupling; Parasitic capacitance; Resistors; Transmitters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
1-4244-0079-1
Type :
conf
DOI :
10.1109/ISSCC.2006.1696058
Filename :
1696058
Link To Document :
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