• DocumentCode
    2566823
  • Title

    Capacitively activated torsional high-Q resonator

  • Author

    Buser, R. ; de Rooij, N.

  • Author_Institution
    Inst. of Microtechnol., Neuchatel Univ., Switzerland
  • fYear
    1990
  • fDate
    11-14 Feb 1990
  • Firstpage
    132
  • Lastpage
    135
  • Abstract
    The fabrication and testing of a capacitively activated torsional high-Q resonator is presented. A schematic cross section of the construction for electrostatic excitation and measuring is shown. The structures are etched from both sides simultaneously in KOH, resulting in a symmetrical cross section of the torsional bar, which could be approximated for the calculation of the resonance frequency by an elliptical cross section. After the metal mask step the resonator in the middle is etched down about 10 microns to have space to oscillate. Then glass plates with electrodes are bonded anodically to the decoupling part. By using silicon directly as a counter-electrode, no supplementary layers have to be deposited on the torsion bar, thus leaving, in principle, the Q-factor unaffected
  • Keywords
    Q-factor; electrostatic devices; resonators; Q-factor; capacitively activated torsional high-Q resonator; counter-electrode; electrostatic excitation; elliptical cross section; glass plates; resonance frequency; symmetrical cross section; Bonding; Electrodes; Electrostatic measurements; Etching; Fabrication; Glass; Resonance; Resonant frequency; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1990. Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
  • Conference_Location
    Napa Valley, CA
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1990.110264
  • Filename
    110264