• DocumentCode
    2566910
  • Title

    T5 What makes Moore’s law continue? — Recent advances in semiconductor

  • Author

    Jin, Linming

  • Author_Institution
    Brocade Commun., San Jose
  • fYear
    2007
  • fDate
    22-25 Oct. 2007
  • Firstpage
    12
  • Lastpage
    12
  • Abstract
    Summary form only given. Many people wandered whether Moore´s law could continue at 90 nm and beyond about 4 years ago. Apparently, we have survived, and Moore´s law has continued, and is still continuing. In this tutorial, it will explore what has made Moore´s law continued, and what is making Moore´s law continuing. The tutorial will first review issues and challenges in semiconductor, the crisis of lithography and of power. It then discusses solutions and workarounds in detail that make Moore´s law continue. They include RET, OPC, PSM, EUV, multi-core, MTCMOS, clock gating, multi-Vt, voltage island, power gating, strain silicon, SOI, high-k and metal gate and other advanced silicon innovations.
  • Keywords
    semiconductor technology; technological forecasting; EUV; MTCMOS; Moore´s law; OPC; PSM; RET; SOI; clock gating; lithography; multi-core; power gating; semiconductor; strain silicon; voltage island; Capacitive sensors; Clocks; High K dielectric materials; High-K gate dielectrics; Lithography; Moore´s Law; Silicon; Technological innovation; USA Councils; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC, 2007. ASICON '07. 7th International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4244-1132-0
  • Electronic_ISBN
    978-1-4244-1132-0
  • Type

    conf

  • DOI
    10.1109/ICASIC.2007.4415553
  • Filename
    4415553