DocumentCode
2566910
Title
T5 What makes Moore’s law continue? — Recent advances in semiconductor
Author
Jin, Linming
Author_Institution
Brocade Commun., San Jose
fYear
2007
fDate
22-25 Oct. 2007
Firstpage
12
Lastpage
12
Abstract
Summary form only given. Many people wandered whether Moore´s law could continue at 90 nm and beyond about 4 years ago. Apparently, we have survived, and Moore´s law has continued, and is still continuing. In this tutorial, it will explore what has made Moore´s law continued, and what is making Moore´s law continuing. The tutorial will first review issues and challenges in semiconductor, the crisis of lithography and of power. It then discusses solutions and workarounds in detail that make Moore´s law continue. They include RET, OPC, PSM, EUV, multi-core, MTCMOS, clock gating, multi-Vt, voltage island, power gating, strain silicon, SOI, high-k and metal gate and other advanced silicon innovations.
Keywords
semiconductor technology; technological forecasting; EUV; MTCMOS; Moore´s law; OPC; PSM; RET; SOI; clock gating; lithography; multi-core; power gating; semiconductor; strain silicon; voltage island; Capacitive sensors; Clocks; High K dielectric materials; High-K gate dielectrics; Lithography; Moore´s Law; Silicon; Technological innovation; USA Councils; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4244-1132-0
Electronic_ISBN
978-1-4244-1132-0
Type
conf
DOI
10.1109/ICASIC.2007.4415553
Filename
4415553
Link To Document