DocumentCode :
2566910
Title :
T5 What makes Moore’s law continue? — Recent advances in semiconductor
Author :
Jin, Linming
Author_Institution :
Brocade Commun., San Jose
fYear :
2007
fDate :
22-25 Oct. 2007
Firstpage :
12
Lastpage :
12
Abstract :
Summary form only given. Many people wandered whether Moore´s law could continue at 90 nm and beyond about 4 years ago. Apparently, we have survived, and Moore´s law has continued, and is still continuing. In this tutorial, it will explore what has made Moore´s law continued, and what is making Moore´s law continuing. The tutorial will first review issues and challenges in semiconductor, the crisis of lithography and of power. It then discusses solutions and workarounds in detail that make Moore´s law continue. They include RET, OPC, PSM, EUV, multi-core, MTCMOS, clock gating, multi-Vt, voltage island, power gating, strain silicon, SOI, high-k and metal gate and other advanced silicon innovations.
Keywords :
semiconductor technology; technological forecasting; EUV; MTCMOS; Moore´s law; OPC; PSM; RET; SOI; clock gating; lithography; multi-core; power gating; semiconductor; strain silicon; voltage island; Capacitive sensors; Clocks; High K dielectric materials; High-K gate dielectrics; Lithography; Moore´s Law; Silicon; Technological innovation; USA Councils; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
Type :
conf
DOI :
10.1109/ICASIC.2007.4415553
Filename :
4415553
Link To Document :
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