Title :
A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM
Author :
Sangbeom Kang ; WooYeong Cho ; Beak-Hyung Cho ; Kwang-Jin Lee ; Chang-Soo Lee ; Hyung-Rock Oh ; Byung-Gil Choi ; Qi Wang ; Hye-Jin Kim ; Mu-Hui Park ; Yu-Hwan Ro ; Suyeon Kim ; Du-Eung Kim ; Kang-Sik Cho ; Choong-Duk Ha ; Youngran Kim ; Ki-Sung Kim ; Choo
Author_Institution :
Samsung, Hwasung
Abstract :
A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S
Keywords :
random-access storage; 0.1 micron; 1.8 V; 10 ns; 3.3 Mbit/s; 62 ns; 66 MHz; burst-read access time; charge pump system; read access time; synchronous burst PRAM; write performance; CMOS technology; Charge pumps; Clocks; Current supplies; Flash memory; Nonvolatile memory; Phase change random access memory; Scalability; Space vector pulse width modulation; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696081
