Title :
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput
Author :
Takeuchi, Ken ; Kameda, Yusuke ; Fujimura, Shigeru ; Otake, H. ; Hosono, Keita ; Shiga, H. ; Watanabe, Yoshihiro ; Futatsuyama, T. ; Shindo, Y. ; Kojima, Masaru ; Iwai, M. ; Shirakawa, Masumi ; Hatakeyama, Kazuo ; Tanaka, Shoji ; Kamei, Toshihiro ; Fu, J.
Author_Institution :
Toshiba, Yokohama
Abstract :
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks
Keywords :
CMOS memory circuits; NAND circuits; flash memories; 10 Mbit/s; 56 nm; 8 Gbit; CMOS technology; dual VDD scheme; external page copy; multi level NAND flash memory; noise-cancellation circuits; program throughput; Cellular phones; Circuit noise; Clocks; Digital audio players; Digital cameras; Image sensors; Motion pictures; Pixel; Throughput; Universal Serial Bus;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696083
