• DocumentCode
    2567323
  • Title

    A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

  • Author

    Takeuchi, Ken ; Kameda, Yusuke ; Fujimura, Shigeru ; Otake, H. ; Hosono, Keita ; Shiga, H. ; Watanabe, Yoshihiro ; Futatsuyama, T. ; Shindo, Y. ; Kojima, Masaru ; Iwai, M. ; Shirakawa, Masumi ; Hatakeyama, Kazuo ; Tanaka, Shoji ; Kamei, Toshihiro ; Fu, J.

  • Author_Institution
    Toshiba, Yokohama
  • fYear
    2006
  • fDate
    6-9 Feb. 2006
  • Firstpage
    507
  • Lastpage
    516
  • Abstract
    Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, external page copy and the dual VDD scheme enabling efficient use of 1MB blocks
  • Keywords
    CMOS memory circuits; NAND circuits; flash memories; 10 Mbit/s; 56 nm; 8 Gbit; CMOS technology; dual VDD scheme; external page copy; multi level NAND flash memory; noise-cancellation circuits; program throughput; Cellular phones; Circuit noise; Clocks; Digital audio players; Digital cameras; Image sensors; Motion pictures; Pixel; Throughput; Universal Serial Bus;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0079-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.2006.1696083
  • Filename
    1696083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2567323