High performance V-band low noise amplifiers

Author

Vaughn, S. ; White, K. ; Mishra, U.K. ; Delaney, M.J. ; Greiling, P. ; Rosenbaum, S.

Author_Institution

Hughes Aircraft Co., El Segundo, CA, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

801

Abstract

Significant advances in high-frequency, low noise amplifier (LNA) performance have been achieved. Noise figures under 2.0 dB have been demonstrated with several single-stage amplifiers incorporating devices from different wafers. These amplifiers utilized an Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As lattice matched InP high-electron-mobility transistor device with a gate periphery of 50 mu m*0.2 mu m. The typical f/sub t/ of these devices is in excess of 120 GHz, with an extrinsic g/sub m/ of more than 900 mS/mm. The best result obtained for a single-stage LNA was 0.8 dB, with an associated gain of 8.7 dB at 63.5 GHz. A three-stage V-band amplifier produced a minimum noise figure of 2.6 dB, with 19.5 dB of gain at 61.0 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; solid-state microwave circuits; 19.5 dB; 2.6 dB; 61 GHz; 63.5 GHz; 8.7 dB; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As-InP; InP; V-band; gate periphery; high-electron-mobility transistor; low noise amplifiers; noise figure; single-stage amplifiers; Circuit noise; Gain; HEMTs; Indium phosphide; Lattices; Life testing; Low-noise amplifiers; Noise figure; Space technology; Working environment noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38844

Filename

38844